Patent Number: 6,309,960

Title: Method of fabricating a semiconductor device

Abstract: In a method for fabricating a semiconductor device, this method comprising the steps of: forming a contact hole (208) so as to cause the etching stopper (205) on the substrate (201) to be exposed; removing an exposed etching stopper (205) on the substrate; filling the contact hole (208) to form a contact plug (210); removing a film (209) that is deposited on the interlayer insulation film (206), so as to expose the contact plug (210); etching the interlayer insulation film (206) and removing the etching stopper (205) on the gate electrode (203); forming an interlayer insulation film (211); etching the interlayer insulation film (211) so as to expose the etching stopper (205) on a diffusion layer (231) and etching the insulation film (204) of the gate electrode (203), so as to form contact holes (213) on the diffusion layer (231) and the gate electrode (203); removing the etching stopper (205) exposed on the diffusion layer (231); and filling the contact hole (213), so as to form the contact plugs (215).

Inventors: Sukekawa; Mitsunari (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 21/8239 (20060101); H01L 21/8242 (20060101); H01L 21/60 (20060101); H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 021/476 (); H01L 021/44 ()

Expiration Date: 10/30/2018