Patent Number: 6,309,963

Title: Method for manufacturing semiconductor device

Abstract: In a method of manufacturing a semiconductor device wherein the step of forming a titanium film and a titanium nitride film on an aluminum-based alloy film overlying a substrate is carried out for a plurality of such substrates in succession; the titanium film and the titanium nitride film are formed within an identical chamber by changing a processing gas, and under the condition that, in case of forming the titanium film by sputtering, a titanium target having been employed for the formation of the titanium nitride film is used. Thus, the formation of an aluminum-titanium alloy layer attributed to a heat treatment at or above 400.degree. C. can be suppressed to enhance an electromigration immunity.

Inventors: Yamagishi; Hajime (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 021/476 ()

Expiration Date: 10/30/2018