Patent Number: 6,309,971

Title: Hot metallization process

Abstract: The invention enables a layer of metal to be formed on a substrate with few or no voids formed in the layer, with increased throughput and without raising the temperature of the substrate to a level that may damage the substrate. A layer of metal can be formed on a substrate using a cold deposition step followed by a hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit metal over the entire surface on which the metal layer is to be formed. In the hot deposition step, further metal is deposited while the substrate is rapidly heated to a target temperature. The rapid heating quickly mobilizes the atoms of the deposited metal, making the deposited metal far less susceptible to cusping and voiding than has been the case with previous methods for depositing a metal layer on a substrate that include a cold deposition step followed by a hot deposition step. In particular, the rapid heating of the substrate can be accomplished by, for example, flowing a heated gas against the substrate at a flow rate that is higher than heretofore thought feasible.

Inventors: Geha; Sam G. (Sunnyvale, CA)

Assignee: Cypress Semiconductor Corporation

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/285 (20060101); H01L 21/768 (20060101); H01L 021/44 ()

Expiration Date: 10/30/2018