Patent Number: 6,309,977

Title: Method for the etchback of a conductive material

Abstract: The present disclosure provides a method for etchback of a conductive layer in a contact via (contact hole). The method described is typically used in the formation of a conductive plug within the contact hole. The method includes a first etchback in which the conductive layer is etched back; a buffer (i.e., transition) step during which the etch rate of the conductive layer is reduced; and a second etchback in which the amount of chemically reactive etchant is reduced from that used in the first etchback and a plasma species is added to provide additional physical bombardment, in an isotropic etch of the substrate surface surrounding the contact hole.

Inventors: Ting; Chris (Taoyuan, TW), Yu; Janet (Changhaw, TW)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/3213 (20060101); H01L 21/321 (20060101); H01L 021/302 ()

Expiration Date: 10/30/2018