Patent Number: 6,309,979

Title: Methods for reducing plasma-induced charging damage

Abstract: A method in a high density plasma chamber for protecting a semiconductor substrate from charging damage from plasma-induced current through the substrate while etching through a selected portion of a conductive layer above the substrate. The method includes performing a bulk etch at least partially through the selected portion of the conductive layer using a first power setting for a plasma generating source of the high density plasma chamber. The method further includes performing a clearing etch through the selected portion of the conductive layer using a second power setting for the plasma generating source. In accordance with this embodiment, the second power setting is substantially minimized to reduce the charging damage.

Inventors: Patrick; Roger (Mountain View, CA), Siu; Stanley C. (Castro Valley, CA), Atzei; Luisarita (Milan, IT)

Assignee: Lam Research Corporation

International Classification: H01L 21/02 (20060101); H01L 21/3213 (20060101); H01L 21/3065 (20060101); H01L 021/302 ()

Expiration Date: 10/30/2018