Patent Number: 6,309,981

Title: Edge bevel removal of copper from silicon wafers

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer.

Inventors: Mayer; Steven T. (Lake Oswego, OR), Russo; Carl (Westlake, OH), Patton; Evan (Portland, OR)

Assignee: Novellus Systems, Inc.

International Classification: C23F 1/08 (20060101); H01L 21/00 (20060101); H01L 021/00 (); C23F 001/00 ()

Expiration Date: 10/30/2018