Patent Number: 6,309,982

Title: Method for minimizing copper diffusion by doping an inorganic dielectric layer with a reducing agent

Abstract: A method for reducing copper diffusion into an inorganic dielectric layer adjacent to a copper structure by doping the inorganic dielectric layer with a reducing agent (e.g. phosphorous, sulfur, or both) during plasma enhanced chemical vapor deposition. The resulting doped inorganic dielectric layer can reduce copper diffusion without a barrier layer reducing fabrication cost and cycle time, as well as reducing RC delay.

Inventors: Chooi; Simon (Singapore, SG), Xu; Yi (Singapore, SG), Aliyu; Yakub (Basking Ridge, NJ), Zhou; Mei-Sheng (Singapore, SG), Sudijono; John Leonard (Singapore, SG), Gupta; Subhash (Singapore, SG), Roy; Sudipto Ranendra (Singapore, SG), Ho; Paul (Singapore, SG)

Assignee: Chartered Semiconductor Manufacturing Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/3115 (20060101); H01L 21/316 (20060101); H01L 021/31 (); H01L 021/469 ()

Expiration Date: 10/30/2018