Patent Number: 6,310,280

Title: Electric voltage source for semiconductor components

Abstract: A semiconductor component comprising a layer of semiconductor material that is doped region-by-region in alternating fashion for positive and negative electrical conductivities. This layer is arranged perpendicular to layer surfaces between thermally conductive layers in such a way that the junctions between two successive regions having different electrical conductivities are electrically insulated outwardly, and are alternately in thermal contact with one of the thermally conductive layers and are thermally insulated from the respective other thermally conductive layer.

Inventors: Aigner; Robert (Munchen, DE), Hierold; Christofer (Munchen, DE), Schmidt; Frank (Poring, DE)

Assignee: Siemens Aktiengesellschaft

International Classification: H01L 35/32 (20060101); H01L 35/12 (20060101); H01L 23/58 (20060101); H01L 35/00 (20060101); H01L 35/22 (20060101); H01L 035/28 ()

Expiration Date: 10/30/2018