Patent Number: 6,310,300

Title: Fluorine-free barrier layer between conductor and insulator for degradation prevention

Abstract: Integrated circuit structure having improved resistance in metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures.

Inventors: Cooney, III; Edward C. (Jericho, VT), Lee; Hyun K. (Essex Junction, VT), McDevitt; Thomas L. (Underhill, VT), Stamper; Anthony K. (Williston, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/285 (20060101); H01L 21/768 (20060101); H05K 001/00 ()

Expiration Date: 10/30/2018