Patent Number: 6,310,359

Title: Structures containing quantum conductive barrier layers

Abstract: Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.

Inventors: Chaloux; Susan E. (Wappingers Falls, NY), Aussilhou; Caroline (Le Coudray-Montceaux, FR), Buchet; Corinne (Corbeil Essonnes, FR), Greer; Heidi L. (Essex Junction, VT), Jammy; Rajarao (Wappingers Falls, NY), Raffin; Patrick (Joinville le Pont, FR), Rodier; Francis (Mondeville, FR), Rousseau; Jean-Marc (Wappingers Falls, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/70 (20060101); H01L 29/66 (20060101); H01L 29/49 (20060101); H01L 29/51 (20060101); H01L 21/8242 (20060101); H01L 29/40 (20060101); H01L 29/94 (20060101); H01L 029/06 ()

Expiration Date: 10/30/2018