Patent Number: 6,310,370

Title: Solid state image sensing device and method of manufacturing the same

Abstract: A CCD solid-state image sensing device has power supply lines formed from a poly-silicon layer and a silicide layer formed on the poly-silicon layer. The silicide layer has a reduced optical reflectivity that inhibits reflections of light on a surface of the power supply line. The silicide layer is silicon combined with a refractory metal, such as tungsten, molybdenum, titanium, or the like. Further, a surface protective film is formed on the power supply lines. The surface protective film includes silicon nitride having an increased quantity of hydrogen that is supplied to an interface between a channel layer and a diffusion layer in order to promote bonding.

Inventors: Inoue; Tetsuhiro (Gifu-ken, JP), Miyagawa; Kazuhiro (Gifu-ken, JP)

Assignee: Sanyo Electric Co., Ltd.

International Classification: H01L 27/148 (20060101); H01L 027/148 (); H01L 029/768 ()

Expiration Date: 10/30/2018