Patent Number: 6,310,372

Title: Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device

Abstract: In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.

Inventors: Katayama; Shigenori (Chino, JP), Yasukawa; Masahiro (Chino, JP)

Assignee: Seiko Epson Corporation

International Classification: G02F 1/13 (20060101); G02F 1/1368 (20060101); G09G 3/36 (20060101); H01L 29/49 (20060101); H01L 29/66 (20060101); H01L 27/12 (20060101); H01L 29/786 (20060101); H01L 29/40 (20060101); H01L 027/01 (); H01L 027/12 (); H01L 031/039 ()

Expiration Date: 10/30/2018