Patent Number: 6,310,374

Title: Nonvolatile semiconductor memory device having extracting electrode

Abstract: This invention is a nonvolatile semiconductor memory device including an electrically rewritable memory cell having a gate, source, drain, and charge storage layer, an extracting electrode electrically connected to at least one of the source and drain of the memory cell, and a counter electrode essentially capacitively coupled with the extracting electrode.

Inventors: Satoh; Shinji (Fujisawa, JP), Shirota; Riichiro (Fujisawa, JP), Aritome; Seiichi (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G11C 16/04 (20060101); H01L 21/70 (20060101); H01L 27/115 (20060101); H01L 21/8247 (20060101); H01L 027/108 (); H01L 029/76 (); H01L 029/94 (); H01L 031/119 ()

Expiration Date: 10/30/2018