Patent Number: 6,310,378

Title: High voltage thin film transistor with improved on-state characteristics and method for making same

Abstract: The present invention is directed to an SOI LDMOS device having improved current handling capability, particularly in the source-follower mode, while maintaining an improved breakdown voltage capability. The improvement in current handling capability is achieved in a first embodiment by introducing an offset region between the source and thin drift regions. The offset region achieves an offset between the onset of the linear doping profile and the thinning of the SOI layer that results in the thin drift region. In a second embodiment a further increase in the current handling capability of an SOI device is achieved by fabricating an oxide layer over the offset region, with the thickness of the oxide layer layer varying up to about half the thickness of the oxide layer fabricated over the thin drift region.

Inventors: Letavic; Theodore (Putnam Valley, NY), Simpson; Mark (White Plains, NY), Arnold; Emil (Chappaqua, NY)

Assignee: Philips Electronics North American Corporation

International Classification: H01L 21/02 (20060101); H01L 29/02 (20060101); H01L 21/266 (20060101); H01L 29/66 (20060101); H01L 21/336 (20060101); H01L 29/06 (20060101); H01L 29/423 (20060101); H01L 29/786 (20060101); H01L 29/78 (20060101); H01L 29/40 (20060101); H01L 29/08 (20060101); H01L 027/01 ()

Expiration Date: 10/30/2018