Patent Number: 6,310,385

Title: High band gap layer to isolate wells in high voltage power integrated circuits

Abstract: An integrated circuit is provided in which a relatively low band gap material is used as a semiconductor device layer and in which an underlying high (wide) band gap material is used as an insulating layer. The insulating material has a high thermal conductivity to allow heat dissipation in conjunction with dielectric isolation. The integrated circuit includes one or more semiconductor wells which are each surrounded on their sides by an insulating material. The bottom of the semiconductor wells are disposed atop the high band gap material which provides both electrical isolation and thermal conductivity. A semiconductor substrate may be provided to support the high band gap material. A layer of insulating material may also be provided between the high band gap material and the semiconductor substrate.

Inventors: Ajit; Janardhanan S. (Sunnyvale, CA)

Assignee: International Rectifier Corp.

International Classification: H01L 27/085 (20060101); H01L 27/092 (20060101); H01L 029/12 ()

Expiration Date: 10/30/2018