Patent Number: 6,310,387

Title: Integrated circuit inductor with high self-resonance frequency

Abstract: An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.

Inventors: Seefeldt; James Douglas (DeForest, WI), Hull; Christopher D. (San Diego, CA)

Assignee: Silicon Wave, Inc.

International Classification: H01L 23/52 (20060101); H01L 23/522 (20060101); H01L 23/64 (20060101); H01L 23/528 (20060101); H01L 23/58 (20060101); H01L 029/00 ()

Expiration Date: 10/30/2018