Patent Number: 6,310,396

Title: Semiconductor circuit apparatus and method for fabricating the semiconductor circuit apparatus

Abstract: A monolithically integrated semiconductor circuit apparatus includes circuit elements disposed on a semiconductor substrate. The circuit elements include at least one semiconductor memory device, drive circuits, and a digital logic component monolithically integrated on the semiconductor substrate. A first contact-making plane is provided which is closer to a main surface of the semiconductor substrate than a penultimate contact-making plane, which is closer to the main surface of the semiconductor substrate than a last contact-making plane. The first, penultimate, and last interconnect patterns electrically interconnect the plurality of circuit elements. A protection device is formed at least in a partial region of the penultimate interconnect pattern. The protection device includes at least a fuse or an antifuse and is assigned to a redundancy activation for defective memory cells and memory cell groups in the semiconductor memory device. The invention furthermore relates to a method for fabricating such a monolithically integrated semiconductor circuit apparatus.

Inventors: Kanitz; Sven (Ubstadt-Weiher, DE)

Assignee: Infineon Technologies AG

International Classification: H01L 23/52 (20060101); H01L 23/525 (20060101); H01L 023/48 (); H01L 023/52 (); H01L 029/40 ()

Expiration Date: 10/30/2018