Patent Number: 6,310,401

Title: Substrate for high-voltage modules

Abstract: A metallic-ceramic substrate having a ceramic layer and metal layers on both sides of the ceramic layer is provided with a high-impedance layer at the surface of the ceramic layer. The high-impedance layer is located adjacent to the metal layers. Therefore, the electrical field intensity at the edges of the metal layers is limited and an even distribution of the electrical potential at the surface of the ceramic layer is achieved. For example, the high-impedance layer may include a thin CrNi-layer, a doped Si-layer, an a--C:H-layer or a Ti-implantation.

Inventors: Stoisiek; Michael (Ottobrunn, DE), Lefranc; Guy (Munich, DE), Bayerer; Reinhold (Warstein, DE), Leuschner; Rainer (Grossenseebach, DE)

Assignee: Siemens Aktiengesellschaft

International Classification: H01L 23/498 (20060101); H01L 23/60 (20060101); H01L 23/48 (20060101); H01L 23/58 (20060101); H05K 1/02 (20060101); H05K 1/16 (20060101); H05K 3/40 (20060101); H05K 1/03 (20060101); H01L 029/40 ()

Expiration Date: 10/30/2018