Patent Number: 6,310,668

Title: LCD wherein opening in source electrode overlaps gate electrode to compensate variations in parasitic capacitance

Abstract: In a liquid crystal display device, a TFT is formed on a first transparent insulation substrate and includes: a semiconductor layer formed adjacent to a gate insulation film; a drain and a source electrode both formed in opposite ends of the semiconductor layer; and, a gate electrode formed in the gate insulation film so as to be disposed in a partially overlapping relationship with both the drain and the source electrode. The source electrode has a source notch portion which satisfies a predetermined equation to compensate for variations in parasitic capacitance appearing between the source and the gate electrode. The device prevents both its responsivity and its aperture ratio from deteriorating and also prevents its leakage current from increasing. The device is free from any possible restrictions caused by a specific construction of the TFT used in the device.

Inventors: Ukita; Tooru (Tokyo, JP)

Assignee: NEC Corporation

International Classification: G02F 1/13 (20060101); G02F 1/1368 (20060101); G02F 001/136 ()

Expiration Date: 10/30/2018