Patent Number: 6,310,751

Title: Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof

Abstract: A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned longitudinal magnetic biasing layers formed of a single longitudinal magnetic biasing material longitudinally magnetically biased in substantially anti-parallel directions. When longitudinally magnetically biasing the second pair of patterned longitudinal magnetic biasing layers there is employed a thermal annealing method employing a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field strength such that the pair of longitudinally magnetically biased patterned first longitudinal magnetic biasing layers is not substantially demagnetized.

Inventors: Guo; Yimin (San Jose, CA), Ju; Kochan (Fremont, CA), Wang; Hui-Chuan (Pleasanton, CA), Liao; Simon H. (Fremont, CA)

Assignee: Headway Technologies, Inc.

International Classification: G01R 33/09 (20060101); G01R 33/06 (20060101); G11B 5/39 (20060101); G11B 5/31 (20060101); G11B 005/39 ()

Expiration Date: 10/30/2018