Patent Number: 6,310,800

Title: Non-volatile semiconductor memory device and method for driving the same

Abstract: A non-volatile semiconductor memory device of the present invention includes, on a semiconductor substrate, a plurality of memory cells arranged in a matrix, a plurality of word lines extending in a row direction, a plurality of source lines extending in the row direction, and a plurality of bit lines extending in a column direction, wherein a plurality of memory cells belonging to a certain row are connected to a first source line among the plurality of source lines, a plurality of memory cells belonging to a row adjacent to the certain row are connected to a second source line among the plurality of source lines, and the first source line is electrically independent from the second source line.

Inventors: Takahashi; Keita (Nara, JP)

Assignee: Matsushita Electronics Corporation

International Classification: G11C 16/04 (20060101); H01L 27/115 (20060101); G11C 016/04 ()

Expiration Date: 10/30/2018