Patent Number: 6,310,803

Title: Semiconductor having mechanism capable of operating at high speed

Abstract: A semiconductor memory device allowing low power consumption and a high speed operation is provided. The semiconductor memory device includes a spare replacement determining circuit, a plurality of memory blocks, a plurality of sense amplifier blocks, and a plurality of selection gate controlling circuits. Normal blocks included in the memory block can be replaced and repaired by a spare block included in one of the memory blocks. The selection gate controlling circuit controls to selectively render a memory block and a sense amplifier block coupled or non-coupled. The selection gate controlling circuit simultaneously couples a normal block included in a selected memory block to a corresponding sense amplifier block as well as a spare block to a corresponding sense amplifier block prior to spare replacement determination.

Inventors: Hidaka; Hideto (Hyogo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: G11C 29/00 (20060101); G11C 007/00 ()

Expiration Date: 10/30/2018