Patent Number: 6,310,823

Title: Circuit for generating internal column strobe signal in synchronoussemiconductor memory device

Abstract: A synchronous semiconductor memory device, comprising: burst signalgeneration means for generating a burst signal for controlling generationof an internal column strobe signal; burst generation control means forcontrolling generation of the burst signal; burst length stop signalgeneration means for generating a burst length stop signal for controllinga length of the burst signal to the burst signal generation means; andinternal column strobe generation means for directly receiving outputsignals of a buffer command which are not decoded to generate an interruptin the middle of the burst signal and generating the internal columnstrobe signal by the burst signal.

Inventors: Nam; Young June (Kyoungki-do, KR)

Assignee:

International Classification:

Expiration Date: 10/32013