Patent Number: 6,332,723

Title: Substrate processing apparatus and method

Abstract: In a state where a wafer is held by a wafer holding section and atemperature controlled liquid is discharged to a rim area on a rear faceof the wafer from flow channels, a developing solution is heaped on afront face of the wafer. Thereafter, the wafer is rotated for apredetermined period of time in a state where the temperature controlledliquid is discharged to the rim area on the rear face of the wafer fromthe flow channels, whereby developing is performed. The wafer is heated bythe wafer holding section with a large heat capacity in an area close to acenter of the wafer, and a liquid film of the temperature controlledliquid is formed in the rim area of the wafer, whereby the wafer isheated. At this time, the wafer is rotated, so that the developingsolution is stirred.

Inventors: Matsuyama; Yuji (Kikuchi-gun, JP), Nagamine; Shuichi (Kikuchi-gun, JP), Asaka; Koichi (Kumamoto, JP)


International Classification: G03F 7/30 (20060101); H01L 21/00 (20060101); G03F 007/30 (); G03D 005/04 (); H01L 021/30 ()

Expiration Date: 12/25/2014