Patent Number: 6,333,201

Title: Method for fabricating nonvolatile ferroelectric memory

Abstract: Method for fabricating a nonvolatile ferroelectric memory, is disclosed,which can prolong a life time of the memory, including the steps offorming an insulating film on a semiconductor substrate, forming a bottomelectrode on the insulating film, forming a ferroelectric film on thebottom electrode, wherein the ferroelectric film is formed of a materialcontaining zirconium oxide as a base composition, the material having anantiferroelectric phase which can not be induced to a ferroelectric phaseby an electric field, and the induced ferroelectric phase exhibiting ahysteresis in polarization-electric field characteristic and unable to beinduced to an antiferroelectric phase by an electric field, and forming atop electrode on the ferroelectric film.

Inventors: Oh; Ki Young (Chungcheongbuk-do, KR), Yoon; Ki Hyun (Kyungki-do, KR)


International Classification: H01L 21/02 (20060101); H01L 021/00 ()

Expiration Date: 12/25/2014