Patent Number: 6,333,220

Title: Method and apparatus for providing low-GIDL dual workfunction gate dopingwith borderless diffusion contact

Abstract: A semiconductor structure is provided along with a corresponding method ofproducing such a structure. The method and structure may include providinga semiconductor substrate, a gate insulator over the semiconductorsubstrate, a conductor comprising intrinsic polysilicon over the gateinsulator, a silicide layer over the polysilicon and an insulating capover the silicide layer. Insulating spacers may be provided along sides ofthe silicide layer and the insulating cap. The polysilicon may be dopedwith a first conductive type dopant. The first conductive type dopant maybe spread over the polysilicon to form a doped polysilicon layer. A gatesidewall layer may be formed on sides of the doped polysilicon layer. Abird's beak of the gate sidewall layer may also be formed in a corner ofthe polysilicon.

Inventors: Mandelman; Jack A. (Stormville, NY), Divakaruni; Ramachandra (Middletown, NY)


International Classification: H01L 21/70 (20060101); H01L 21/8234 (20060101); H01L 21/8242 (20060101); H01L 021/824 ()

Expiration Date: 12/25/2014