Patent Number: 6,333,227

Title: Methods of forming hemispherical grain silicon electrodes by crystallizing the necks thereof

Abstract: The crystallinity of non-monocrystalline silicon necks that connect monocrystalline silicon hemispherical grains to an underlying electrode on an integrated circuit substrate is increased. Preferably, the non-monocrystalline silicon necks are crystallized. By crystallizing the non-monocrystalline silicon necks, the necks may be made more resistant to breaking and detaching during subsequent cleaning processes. The non-monocrystalline silicon necks preferably are crystallized by thermal annealing after fabrication of the hemispherical grain silicon.

Inventors: Kim; Sung-Tae (Kyunggi-do, KR), Kim; Kyung-Hoon (Seoul, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 021/824 ()

Expiration Date: 12/25/2018