Patent Number: 6,333,243

Title: Method for growing field oxide to minimize birds' beak length

Abstract: A method for forming field oxide isolation regions using oxygenimplantation is described. An oxidation resistant layer such as siliconnitride is formed on a silicon substrate, and acts as an oxidation mask.An opening is then formed in the nitride layer, where field oxide isdesired. In one embodiment of the invention, oxygen is implanted into thisopening, followed by thermal oxidation. In a second embodiment of theinvention, the opening is thermally oxidized, followed by a deep oxygenimplant and anneal. Encroachment of the field oxide under the nitridelayer is decreased, resulting in a minimum "birds' beak" length.

Inventors: Thakur; Randhir P. S. (Boise, ID), Nuttall; Michael (Meridian, ID), Pan; Pai-Hung (Boise, ID)


International Classification: H01L 21/762 (20060101); H01L 21/70 (20060101); H01L 021/76 ()

Expiration Date: 12/25/2014