Patent Number: 6,333,261

Title: Method for preventing aluminum intrusions

Abstract: A semiconductor wafer includes a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the aluminum layer. A titanium layer is formed on the bottom and on the walls of the via hole. A physical vapor deposition process is then performed to form a first titanium nitride layer on the titanium layer. A chemical vapor deposition process is then performed to form a second titanium nitride layer on the first titanium nitride layer.

Inventors: Lin; Chi-Jung (Chang Hua Hsien, TW), Huang; Jyh-J (Hsin Chu, TW), Lu; Horng-Bor (Hsin Chu, TW), Wu; Kun-Lin (Hsin Chu Hsien, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 021/44 ()

Expiration Date: 12/25/2018