Patent Number: 6,333,269

Title: Plasma treatment system and method

Abstract: It is an object to enhance the degree of freedom for the shape of an obtained magnetic field to enhance the inplane uniformity of thickness of first and second films when the first and second films are continuously formed on a substrate to be treated. A main electromagnetic coil 5 is provided outside of a plasma chamber 21 so as to be movable vertically by a lifting shaft 52. When plasma is produced in a vacuum vessel 2 by the electron cyclotron resonance between a microwave and a magnetic field to continuously deposit a film of a two-layer structure, which comprises an SiOF film and an SiO.sub.2 film, on a wafer W with the produced plasma, a process for forming the SiOF film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of a transmission window 23 by 139 mm, and a process for forming the SiO.sub.2 film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of the transmission 23 by 157 mm.

Inventors: Naito; Yoko (Sagamihara, JP), Amano; Hideaki (Zama, JP)

Assignee: Tokyo Electron Limited

International Classification: C23C 16/50 (20060101); C23C 16/511 (20060101); H01J 37/32 (20060101); H01L 21/02 (20060101); H01L 21/316 (20060101); H01L 021/306 ()

Expiration Date: 12/25/2018