Patent Number: 6,333,277

Title: Method for reducing non-homogenous density during forming process of borophosphosilicate glass layer

Abstract: A method for reducing non-homogenous density during forming process of borophosphosilicate glass layer, at least includes following basic steps: delivers an oxygen gas through a gas pipeline into a chamber, and also delivers a tetraethyl-orthosilicate gas, a tri-ethyl-borate gas and a tri-ethyl-phosphate gas through a reactant pipeline into a bypass pipeline to let the chamber is filled by only the oxygen gas, wherein the bypass pipeline is adjacent to the chamber; whenever flow of the oxygen gas in both the gas pipeline and the chamber is stable and flow of both the tetraethyl-orthosilicate gas, the tri-ethyl-borate gas and the tri-ethyl-phosphate gas in the reactant pipeline also is stable, closes the reactant pipeline and then delivers the tetraethyl-orthosilicate gas, the tri-ethyl-borate gas and the tri-ethyl-phosphate gas into the chamber; and performs at least a process to form a borophosphosilicate glass layer on a wafer that locates inside the chamber. Obviously, one essential characteristic of the method is reactants are delivered into chamber after flow of reactants are stable, and then non-homogenous density of borophosphosilicate glass layer that induced by unstable flow is effectively prevented.

Inventors: Lin; Keng-Chu (Ping-Tung, TW), Lee; Hsiao-Wen (Hsin-Chu, TW), Chou; Hou-Hung (Taipei, TW), Chen; Yi-Wen (Hsin-Chu, TW)

Assignee: Vanguard International Semiconductor Corporation

International Classification: H01L 21/02 (20060101); H01L 21/316 (20060101); H01L 021/31 (); H01L 021/469 ()

Expiration Date: 12/25/2018