Patent Number: 6,333,526

Title: Charge transfer device and a manufacturing process therefor

Abstract: This invention provides a manufacturing process for a charge transfer device comprising an N-type well formed in a P-type well on a semiconductor substrate for transferring a signal charge, an N+region formed on both sides along the charge transfer direction of the N-type well and containing a dopant in a higher concentration than that in the N-type well, a P-type region formed around the N+ region, and a gate electrode covering the N+ region and the N-type well and formed via a gate insulator, comprising ion-implanting an N-type dopant into the region to be the N-type well and the N+ region using the first mask and ion-implanting a P-type dopant into the region to be the N-type well using the second mask. Thus, there can be provided a charge transfer device which has a structure where there is an N+ region on both sides of the N-type well, a large maximum transferable charge and a compact CCD with a width up to 3 times the minimum design dimension.

Inventors: Tanabe; Akihito (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 27/148 (20060101); H01L 027/148 (); H01L 029/765 (); H01L 029/768 ()

Expiration Date: 12/25/2018