Patent Number: 6,333,534

Title: Semiconductor device and method of fabricating

Abstract: A capacitor in a semiconductor device is constituted by a lower electrodehaving a laminated layer including an adhesive layer formed on aninsulating film, a barrier layer formed so as to cover the upper surfaceof the insulating layer, a nitride side formed so as to cover the sideface of the adhesive layer, and an electrode layer formed so as to coverthe upper surface of the barrier layer, a capacitor insulating film formedso as to cover the upper surface and side surface of the lower electrode,and an upper electrode formed so as to cover the surface of the capacitorinsulating film.

Inventors: Chen; Shih-Chang (Tokyo, JP)


International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/285 (20060101); H01L 21/8242 (20060101); H01L 027/108 ()

Expiration Date: 12/25/2014