Patent Number: 6,396,152

Title: Semiconductor device and production method thereof

Abstract: A semiconductor device includes a semiconductor substrate, a lower interlayer film formed on an upper side thereof, an intermediate film formed on an upper side thereof, an upper interlayer film formed on an upper side thereof, and a lower plug made of an electrically conductive material that penetrates through the lower interlayer film and the intermediate film. However, the intermediate film has such a material quality that a ratio of an etching rate of the intermediate film to an etching rate of the upper interlayer film is sufficiently small to allow processing of the upper contact hole by etching the upper interlayer film using the intermediate film as a stopper under an etching condition for forming the upper contact hole.

Inventors: Nagai; Yukihiro (Hyogo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: H01L 21/768 (20060101); H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/60 (20060101); H01L 23/52 (20060101); H01L 23/528 (20060101); H01L 029/40 ()

Expiration Date: 05/28/2019