Patent Number: 6,429,053

Title: Semiconductor device method of fabricating same, and, electrooptical device

Abstract: A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Arai; Yasuyuki (Kanagawa, JP), Teramoto; Satoshi (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: G02F 1/13 (20060101); G02F 1/1333 (20060101); H01L 29/66 (20060101); H01L 29/786 (20060101); G02F 1/1362 (20060101); H01L 021/84 ()

Expiration Date: 08/06/2019