Patent Number: 6,429,107

Title: Method for forming conductive contact of semiconductor device

Abstract: A method for forming a conductive contact of a semiconductor device is provided. According to one aspect of the present invention, a dummy dielectric layer pattern having a dummy opening and an interdielectric layer pattern having a lower etch-rate than that of the dummy dielectric layer, for filling the dummy opening are formed on a semiconductor substrate. The dummy dielectric layer pattern using the interdielectric layer pattern as an etching mask is selectively removed, and a contact opening for exposing the semiconductor substrate of a portion in which the dummy dielectric layer pattern is located.

Inventors: Kim; Hyoung-joon (Seoul, KR), Nam; Byeong-yun (Suwon, KR), Park; Kyung-won (Suwon, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/768 (20060101); H01L 21/60 (20060101); H01L 21/70 (20060101); H01L 021/320 ()

Expiration Date: 08/06/2019