Patent Number: 6,429,115

Title: Method of manufacturing multilevel interconnects including performing a surface treatment to form a hydrophilic surface layer

Abstract: A method of manufacturing multilevel interconnects. A single or dual damascene interconnect structure is formed in a first dielectric layer. A cap layer or middle etch stop layer is formed over the interconnect structure and the first dielectric layer. The cap layer or the middle etch stop layer is treated with nitrogen plasma to convert a hydrophobic surface into a hydrophilic surface. An adhesion promoter layer is formed over the cap layer or middle etch stop layer. A low-k dielectric layer is formed over the adhesion promoter layer. A single or dual damascene structure is formed in the low-k dielectric layer, thereby forming a multilevel interconnect.

Inventors: Tsai; Cheng-Yuan (Yunlin Hsien, TW), Lin; Chin-Hsiang (Nantou Hsien, TW), Yang; Ming-Sheng (Hsinchu, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 21/768 (20060101); H01L 21/70 (20060101); H01L 021/476 ()

Expiration Date: 08/06/2019