Patent Number: 6,429,455

Title: Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure

Abstract: A method to enhance the formation of nucleation sites on at least one narrow silicon structure comprises the step: forming at least one nucleation region (206/208): masking the at least one narrow silicon structure (202) with a mask (302); treating the at least one nucleation region (206/208) to enhance an ability of said region to form C54 nucleation sites; and removing the mask from the at least one narrow silicon structure (202). In another embodiment, a silicon device capable of undergoing a phase transformation comprises at least one narrow silicon structure (202) formed of TiSi.sub.2 ; and at least one nucleation region (206/208) attached to the at least one narrow silicon region (202), said at least one nucleation region (206/208) having a width which is greater than a width of said at least one narrow silicon structure (202) and said at least one nucleation region (206/208) capable of generating a high density of C54 nucleation sites such that said high density of nucleation sites causes a phase transformation (502a/502b) to propagate along the at least one silicon structure (202).

Inventors: McNeil; Vincent Maurice (Dallas, TX), Kittl; Jorge Adrian (Plano, TX)

Assignee: Texas Instruments Incorporated

International Classification: H01L 21/02 (20060101); H01L 21/28 (20060101); H01L 21/3205 (20060101); H01L 21/336 (20060101); H01L 029/04 ()

Expiration Date: 08/06/2019