Patent Number: 6,429,459

Title: Semiconductor component with foreign atoms introduced by ion implantation and process for producing the same

Abstract: A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm and at least 10% of the implanted impurity atoms are electrically activated.

Inventors: Wondrak; Wolfgang (Frankfurt, DE), Lauer; Vera (Griesheim, DE), Kaminski; Nando (Moerfelden-Walldorf, DE), Held; Raban (Moembris, DE), Pensl; Gerhard (Herzogenaurach, DE), Sheppard; Scott T. (Durham, NC)

Assignee: DaimlerChrysler AG

International Classification: H01L 21/02 (20060101); H01L 21/04 (20060101); H01L 031/031 ()

Expiration Date: 08/06/2019