Patent Number: 6,429,460

Title: Highly luminous light emitting device

Abstract: The present invention discloses a light emitting device which includes a substrate, a light emitting layer on the substrate, a current restriction layer on the light emitting layer, a current spreading layer on the current restriction layer, a dielectric layer on the current spreading layer defining an exposed area, a top ohmic contact metal layer on the exposed area, and a bottom ohmic contact metal layer under the substrate. The current spreading layer has a rough top surface. The current restriction layer includes a conductive layer that allows current to flow through, and an insulating layer around the conductive layer. The insulating layer prohibits the current from flowing through in a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer. The substrate is partially removed to form a cavity for avoiding substrate absorption. A highly luminous light emitting device is obtained by introductions of the rough top surface of the current spreading layer, partial removal of the substrate, the current restriction layer, and optimal layouts of the top and bottom ohmic contact metal layers and the conductive layer.

Inventors: Chen; Tzer-Perng (Hsinchu, TW), Chang; Chih-Sung (Taipei, TW), Chiang; Chih-Li (Taichung, TW)

Assignee: United Epitaxy Company, Ltd.

International Classification: H01L 33/00 (20060101); H01L 027/15 (); H01L 031/12 (); H01L 033/00 ()

Expiration Date: 08/06/2019