Patent Number: 6,429,472

Title: Split gate type flash memory

Abstract: A split gate type flash memory having an active region that improves an endurance characteristic along with program/erase efficiency, wherein the split gate type flash memory provides for improvement in the endurance characteristic and program/erase efficiency by making the width of an active region in a portion in which a source is overlapped by a floating gate as large as possible.

Inventors: Kim; Byung-ki (Yongin, KR), Ryu; Won-il (Yongin, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G11C 16/04 (20060101); H01L 21/02 (20060101); H01L 29/40 (20060101); H01L 21/70 (20060101); H01L 21/28 (20060101); H01L 29/423 (20060101); H01L 29/66 (20060101); H01L 21/8247 (20060101); H01L 29/788 (20060101); H01L 029/72 ()

Expiration Date: 08/06/2019