Patent Number: 6,429,502

Title: Multi-chambered trench isolated guard ring region for providing RF isolation

Abstract: A novel trench isolated guard ring region for providing RF isolation is disclosed. The semiconductor integrated circuit (IC) device of the present invention comprises a substrate, an insulating layer formed on the substrate, a buried layer formed on the insulating layer, and an epitaxial layer of a first conductivity type formed on the buried layer. A first isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds a first selected surface area of the epitaxial layer. A second isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds the first isolation trench and defines a guard ring region between itself and the first isolation trench. A plurality of isolation chambers is formed within the first and second isolation trenches. A collector is implanted into the epitaxial layer in the guard ring region. A contact is made to the collector, and a conductor connects the contact to a ground node.

Inventors: Librizzi; Michael (San Diego, CA), Hull; Christopher D. (San Diego, CA)

Assignee: Silicon Wave, Inc.

International Classification: H01L 21/765 (20060101); H01L 21/762 (20060101); H01L 21/70 (20060101); H01L 029/00 ()

Expiration Date: 08/06/2019