Patent Number: 6,429,524

Title: Ultra-thin tantalum nitride copper interconnect barrier

Abstract: A method of fabricating an interconnect for a semiconductor device is disclosed. The method comprises: forming a dielectric layer on a semiconductor substrate; forming a trench in the dielectric layer; placing the semiconductor substrate in a plasma deposition chamber having a tantalum target; initiating a plasma in the presence of nitrogen in the plasma deposition chamber; and depositing an ultra-thin layer comprising tantalum and nitrogen in the trench.

Inventors: Cooney, III; Edward C. (Jericho, VT), Stamper; Anthony K. (Williston, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 23/532 (20060101); H01L 23/52 (20060101); H01C 023/48 ()

Expiration Date: 08/06/2019