Patent Number: 6,445,070

Title: Coherent carbide diffusion barrier for integrated circuit interconnects

Abstract: An integrated circuit and manufacturing method therefore is provided having a semiconductor substrate with a semiconductor device and a device dielectric layer formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer has a channel opening, a barrier layer lining the channel opening, and a conductor core filling the channel opening. A barrier layer is deposited which contains an element capable of reacting during thermal treatment with both the conductor core and the channel dielectric layer to form a barrier to diffusion of the material of the conductor core to the channel dielectric layer. The barrier layer reacts with the conductor core and the channel dielectric layer to form a compound which provides a bond which blocks surface diffusion and permits conductor core to conductor core diffusion in dual inlaid integrated circuits.

Inventors: Wang; Pin-Chin Connie (Menlo Park, CA), Marathe; Amit P. (Milpitas, CA), Ngo; Minh Van (Fremont, CA), Prangrle; Suzette K. (Cupertino, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 23/532 (20060101); H01L 23/522 (20060101); H01L 23/52 (20060101); H01L 023/48 (); H01L 023/52 (); H01L 029/40 ()

Expiration Date: 09/03/2019