Patent Number: 6,480,410

Title: Nonvolatile ferroelectric memory device and method for driving the same

Abstract: A nonvolatile ferroelectric memory device and method for driving the sameincludes data reading and writing operations performed uniformly in awhole cell array and reduces the size of a cell by lowering a sensingvoltage. The nonvolatile ferroelectric memory device includes a main celland a reference cell provided with one transistor and one or moreferroelectric capacitors among a first voltage applying line (wordline), abitline and a second voltage applying line. The method includes the stepsof primarily activating the wordline and a reference wordline at highlevel in an active period of one cycle, inactivating the wordline and thereference wordline, activating a sensing amplifier after the wordline isinactivated, secondarily or thirdly activating the wordline at high levelin a state that the sensing amplifier is activated in the active period,applying a high level at least once or more to the second voltage applyingline to be coincident with the secondary or third active period of thewordline in at least one point, and transiting a chip enable signal fromlow level to high level to precharge the chip enable signal.

Inventors: Kang; Hee Bok (Daejeon-shi, KR), Kye; Hun Woo (Kyonggi-do, KR), Kim; Duck Ju (Cheju-do, KR), Park; Je Hoon (Kyonggi-do, KR)


International Classification: G11C 11/22 (20060101); G11C 011/22 ()

Expiration Date: 11/12014