Patent Number: 6,480,413

Title: Two-dimensional resonant tunneling diode memory cell

Abstract: Two resonant tunneling diodes with hysteretic folding V-I characteristics are connected in series. The node voltage and the series current of the cell determine the memory state and there can be a large number of states. During writing, one writing pulse sets the pull-down RTD to one of the positive differential resistance region of the hysteretic V-I characteristic, and a second writing pulse sets the pull-up RTD to one of positive differential resistance region. During writing, the series current is sensed by measuring the colon ground current.

Inventors: Lin; Hung Chang (Silver Spring, MD)

Assignee: Epitaxial Technologies LLC

International Classification: G11C 11/56 (20060101); G11C 17/06 (20060101); G11C 011/36 ()

Expiration Date: 11/12/2019