Patent Number: 6,480,520

Title: Aluminum-free vertical cavity surface emitting lasers (VCSELs)

Abstract: An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO.sub.2. The active region and upper p-type DBR is then deposited by MOCVD.

Inventors: Razeghi; Manijeh (Wilmette, IL)

Assignee: MP Technologies LLC

International Classification: H01S 5/183 (20060101); H01S 5/00 (20060101); H01S 5/343 (20060101); H01S 5/02 (20060101); H02S 005/183 ()

Expiration Date: 11/12/2019