Patent Number: 6,486,480

Title: Plasma formed ion beam projection lithography system

Abstract: A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

Inventors: Leung; Ka-Ngo (Hercules, CA), Lee; Yung-Hee Yvette (Berkeley, CA), Ngo; Vinh (San Jose, CA), Zahir; Nastaran (Greenbrae, CA)

Assignee: The Regents of the University of California

International Classification: H01J 37/317 (20060101); H01J 37/30 (20060101); H01J 37/08 (20060101); H01J 037/08 (); H01J 037/30 (); H01J 003/14 (); H01J 003/18 (); H01J 003/26 (); A61N 005/00 (); G21G 005/00 ()

Expiration Date: 11/26/2011