Patent Number: 6,512,244

Title: SOI device with structure for enhancing carrier recombination and method of fabricating same

Abstract: A semiconductor-on-insulator (SOI) device. The SOI device includes an SOI wafer including an active layer, a substrate and a buried insulation layer disposed therebetween. The active layer includes an abrupt region disposed along a lower portion of the active layer, the abrupt region having the same P or N doping type as a doping type of a body region.

Inventors: Ju; Dong-Hyuk (Cupertino, CA), En; William G. (Milpitas, CA), Krishnan; Srinath (Campbell, CA), An; Xilin Judy (San Jose, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 29/66 (20060101); H01L 21/336 (20060101); H01L 29/786 (20060101); H01L 21/02 (20060101); H01L 021/20 ()

Expiration Date: 01/28/2020