Patent Number: 6,512,246

Title: Thin film transistor

Abstract: In a thin film transistor provided with a metallic layer with a light-shading property and a Si layer formed on an insulating layer, a dent for locally thinning the insulating layer is formed on a portion corresponding to a drain region. When the Si layer is recrystallized by means of a laser light irradiation, the dent serves as a crystalline nucleus formation region in order to recrystallize a particular portion earlier than other portions. Recrystallization of melted Si starts from a periphery of a bottom surface of the dent, hence a Si layer formed of a single crystal or uniformed crystal grains which serves as an active region of the TFT can be obtained.

Inventors: Tanabe; Hiroshi (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 29/66 (20060101); H01L 21/336 (20060101); H01L 29/786 (20060101); H01L 21/02 (20060101); G02F 1/13 (20060101); G02F 1/1362 (20060101); H01L 029/04 (); H01L 031/036 ()

Expiration Date: 01/28/2020